Electronics

Electronic items as follows (see List of Items Controlled).

General purpose "electronic assemblies," modules and equipment, as follows (see List of Items Controlled).

Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic "components" using "specially designed" spray nozzles that are designed to maintain electronic "components" within their operating temperature range, and "specially designed" "components" therefore.

Specific Laboratory Equipment as Follows (See List of Items Controlled)

Integrated circuits as follows (see List of Items Controlled).

Electronic equipment, devices, "parts" and "components," other than those controlled by 3A001, as follows (see List of Items Controlled).

Electronic "parts" and "components," other than those controlled by 3A001, as follows (see List of Items Controlled).

Frequency changers (a.k.a. converters or inverters) and generators, except those subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110), that are usable as a variable frequency or fixed frequency motor drive and have all of the characteristics described in this ECCN (see List of Items Controlled).

High-power direct current power supplies having both of the following characteristics (see List of Items Controlled), excluding items that are subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110).

High-voltage direct current power supplies, having both of the following characteristics (see List of Items Controlled), excluding items that are subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110).

Switching devices, as follows (see List of Items Controlled).

Firing sets and equivalent high-current pulse generators for detonators controlled by 3A232 (see List of Items Controlled).

High-speed pulse generators, and pulse heads therefor, having both of the following characteristics (see List of Items Controlled).

Neutron generator systems, including tubes, having both of the characteristics described in this ECCN (see List of Items Controlled).

Detonators and multipoint initiation systems, as follows (see List of Items Controlled).

Mass spectrometers, capable of measuring ions of 230 u or greater and having a resolution of better than 2 parts in 230, and ion sources therefor, excluding items that are subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110).

Striplines to provide low inductance path to detonators with the following characteristics (see List of Items Controlled).

Military electronics, as follows (see List of Items Controlled).

Electronic items, not specified by ECCN 3A001, as follows (see List of Items Controlled).

Cryogenic cooling systems and components, as follows (see List of Items Controlled).

Voice print identification and analysis equipment and "specially designed" "components" therefor, n.e.s.

Polygraphs (except biomedical recorders designed for use in medical facilities for monitoring biological and neurophysical responses); fingerprint analyzers, cameras and equipment, n.e.s.; automated fingerprint and identification retrieval systems, n.e.s.; psychological stress analysis equipment; electronic monitoring restraint devices; and "specially designed" "components" and "accessories" therefor, n.e.s.

Electronic devices, and "components" not controlled by 3A001.

General purpose electronic equipment, not controlled by 3A002, as Follows (See List of Items Controlled).

Specific Processing Equipment, n.e.s., as Follows (See List of Items Controlled).

Equipment for the manufacturing of semiconductor devices, materials, or related equipment, as follows (see List of Items Controlled) and "specially designed" "components" and "accessories" therefor.

Test or inspection equipment "specially designed" for testing or inspecting finished or unfinished semiconductor devices as follows (see List of Items Controlled) and "specially designed" "components" and "accessories" therefor.

Test, inspection, and production commodities for military electronics, as follows (see List of Items Controlled).

Scanning Electron Microscope (SEM) equipment designed for imaging semiconductor devices or integrated circuits, having all of the following (See List of Items Controlled).

Cryogenic wafer probing "equipment", having all of the following (see List of Items Controlled).

Equipment not controlled by 3B001, 3B993, or 3B994, for the manufacture of electronic "parts," "components," and materials, and "specially designed" "parts," "components," and "accessories" therefor.

Equipment not controlled by 3B002, 3B993, or 3B994, for the inspection or testing of electronic "components" and materials, (see List of Items Controlled) and "specially designed" "parts," "components" and "accessories" therefor.

Specified semiconductor manufacturing equipment as follows (see list of items controls), and "specially designed" "components" and "accessories" therefor.

Semiconductor manufacturing equipment that enables "advanced-node integrated circuit" production, as follows (see list of items controls), and "specially designed" "components" and "accessories" therefor.

Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following (see List of Items Controlled).

Resist materials as follows (see List of Items Controlled) and "substrates" coated with the following resists.

Organo-inorganic compounds as follows (see List of Items Controlled).

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99.999%, even diluted in inert gases or hydrogen.

High resistivity materials as follows (See List of Items Controlled).

Materials, not specified by 3C001, consisting of a "substrate" specified by 3C005 with at least one epitaxial layer of Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3) or diamond.

Epitaxial materials consisting of a "substrate" having at least one epitaxially grown layer of any of the following (see List of Items Controlled).

Fluorides, hydrides, chlorides, of silicon or germanium, containing any of the following (See List of Items Controlled).

Silicon, silicon oxides, germanium or germanium oxides, containing any of the following (see List of Items Controlled).

Positive resists designed for semiconductor lithography specially adjusted (optimized) for use at wavelengths between 370 and 193 nm.

"Software" "specially designed" for the "development" or "production" of commodities controlled by 3A001.b to 3A002.h, 3A090, or 3B (except 3B001.a.4, c, d, f.1, f.5, k to n, p.2, p.4, r, 3B002.c, 3B903, 3B904, 3B991, 3B992, 3B993, or 3B994).

"Software" "specially designed" for the "use" of equipment controlled by 3B001.a to .f, or 3B002.

'Computational lithography' "software" "specially designed" for the "development" of patterns on "EUV"-lithography masks or reticles.

"Software" "specially designed" for the "development" of equipment controlled by 3A003.

"Software" "specially designed" to restore normal operation of a microcomputer, "microprocessor microcircuit" or "microcomputer microcircuit" within 1 ms after an Electromagnetic Pulse (EMP) or Electrostatic Discharge (ESD) disruption, without loss of continuation of operation.

' Electronic Computer-Aided Design ' ( ' ECAD ' ) " software" "specially designed" for the "development" of integrated circuits having any "Gate-All-Around Field-Effect Transistor " ( " GAAFET ") structure, and having any of the following (see List of Items Controlled).

"Software" "specially designed" or modified for the "use" of equipment controlled by 3A101.b.

"Software" "specially designed" for the "use" of equipment described in ECCN 3A225.

"Software" "specially designed" to enhance or release the performance characteristics of frequency changers or generators to meet or exceed the level of the performance characteristics described in ECCN 3A225.

"Software" "specially designed" for military electronics, as follows (see List of Items Controlled).

"Software", not specified elsewhere, "specially designed" or modified for the "development" or "production" of items specified in ECCN 3A901.b, 3B903, or 3B904.

"Software" designed to extract "GDSII" or equivalent standard layout data and perform layer-to-layer alignment from SEM images, and generate multi-layer "GDSII" data or the circuit netlist.

"Software" "specially designed" for the "development," "production" or "use" of commodities controlled by 3A980 and 3A981.

"Software" "specially designed" for the "development," "production" or "use" of electronic devices, "parts" or "components" controlled by 3A991, general purpose electronic equipment controlled by 3A992, or manufacturing and test equipment controlled by 3B991 and 3B992; or "software" "specially designed" for the "use" of equipment controlled by 3B001.g and .h.

"Software" for the "development" or "production" of commodities specified in 3B001.a.4, c, d, f.1, f.5, f.6, k to n, p.2, p.4, r, or 3B002.c and "software" as follows (see List of Items Controlled).

"Software" for the "development" or "production" of commodities specified in 3B993 and "software" as follows (see List of Items Controlled).

"Software" "specially designed" for the "development" or "production" of commodities specified in 3B994 and "software" as follows (see List of Items Controlled).

"Technology" according to the General Technology Note for the "development" or "production" of commodities controlled by 3A (except 3A069, 3A901, 3A904, 3A980, 3A981, 3A991, 3A992, or 3A999), 3B (except 3B001.a.4, c, d, f.1, f.5, k to n, p.2, p.4, r, 3B002.c, 3B903, 3B904, 3B991, 3B992, 3B993, or 3B994) or 3C (except 3C907, 3C908, 3C909, or 3C992).

" Technology " according to the General Technology Note other than that controlled in 3E001 for the " development " or " production " of a " microprocessor microcircuit ", " micro-computer microcircuit " and microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics (see List of Items Controlled).

Other "technology" for the "development" or "production" of the following (see List of Items Controlled).

"Technology" "required" for the slicing, grinding and polishing of 300 mm diameter silicon wafers to achieve a 'Site Front least sQuares Range' ('SFQR') less than or equal to 20 nm at any site of 26 mm x 8 mm on the front surface of the wafer and an edge exclusion less than or equal to 2 mm.

"Technology" according to the General Technology Note for the "development" or "production" of items controlled by 3A069.

"Technology" according to the General Technology Note for the "use" of equipment or "software" controlled by 3A001.a.1 or .2, 3A101, or 3D101.

"Technology" according to the General Technology Note for the "development" of "software" controlled by 3D101.

"Technology" according to the General Technology Note for the "use" of equipment controlled by 3A001.e.2 or .e.3, 3A201 or 3A225 to 3A234.

"Technology" according to the General Technology Note for the "development," "production," or "use" of "software" controlled by 3D201 or 3D202.

"Technology" "required" for military electronics, as follows (see List of Items Controlled).

"Technology" according to the General Technology Note for the "development" or "production" of items controlled by ECCN 3A901, 3A904, 3B903, 3B904, 3C907, 3C908, or 3C909.

"Technology" according to the General Technology Note for the "development" or "production" of integrated circuits or devices, using "Gate all-around Field-Effect Transistor" ("GAAFET") structures.

"Technology" "specially designed" for "development," "production" or "use" of commodities controlled by 3A980 and 3A981.

"Technology" for the "development," "production" or "use" of electronic devices, "parts" or "components" controlled by 3A991, general purpose electronic equipment controlled by 3A992, or manufacturing and test equipment controlled by 3B991 or 3B992, or materials controlled by 3C992.

"Technology" for the "production" or "development" of commodities specified in 3B001.a.4, c, d, f.1, f.5, f.6, k to n, p.2, p.4, r; and 3B002.c; and "technology" as follows (see List of Items Controlled).

"Technology" for the "development" or "production" of commodities specified in 3B993; and "technology" as follows (see List of Items Controlled).

"Technology" "specially designed" for the "development" or "production" of commodities specified in 3B994 and "technology" as follows (see List of Items Controlled).