ECCN 3C006
NSATMaterials, not specified by 3C001, consisting of a substrate specified by 3C005 with at least one epitaxial layer of Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3) or diamond.
What This ECCN Covers
ECCN 3C006 controls materials (not specified by 3C001) consisting of a 3C005 "substrate" with at least one epitaxial layer of Silicon Carbide, Gallium Nitride, or another wide-bandgap compound. In other words, it covers the epitaxial wide-bandgap wafers built on controlled substrates, and is controlled for National Security and Anti-Terrorism reasons.
Who needs to check this?
Epitaxial wafer producers and device manufacturers exporting GaN-on-SiC, AlGaN, or similar wide-bandgap epi structures.
Compliance tip
Classification depends on both the substrate (3C005) and the epitaxial layer — document the full material stack. Confirm the NS and AT Country Chart columns, and check whether the finished devices fall under separate Category 3 entries such as 3A001.
Control Reasons
Items controlled for national security reasons under multilateral export control regimes.
Items controlled for anti-terrorism reasons. Most items on the CCL have AT controls.
Disclaimer
This information is for reference only. For official classifications, consult BIS or a qualified export control professional.