ECCN 3C001
NSATHetero-epitaxial materials consisting of a substrate having stacked epitaxially grown multiple layers of any of the following .
What This ECCN Covers
ECCN 3C001 controls hetero-epitaxial materials — a substrate with stacked, epitaxially grown layers of materials such as silicon, germanium, or compound semiconductors meeting the entry's criteria. These engineered semiconductor materials are the foundation for high-performance and high-frequency devices, and are controlled for National Security and Anti-Terrorism reasons.
Who needs to check this?
Semiconductor materials suppliers, epitaxial wafer producers, and manufacturers sourcing compound-semiconductor substrates for RF, optoelectronic, or power devices.
Compliance tip
Classification depends on the specific layer materials and structure described in the entry, so document the epitaxial stack precisely. Confirm the NS and AT Country Chart columns, and remember that downstream devices and the equipment that makes these materials are controlled under separate Category 3 entries.
Items Covered
- a.Silicon (Si);
- b.Germanium (Ge);
- c.Silicon Carbide (SiC); or
- d."III/V compounds" of gallium or indium.
- e.Gallium Oxide (Ga2O3); or
- f.Diamond.
Control Reasons
Items controlled for national security reasons under multilateral export control regimes.
Items controlled for anti-terrorism reasons. Most items on the CCL have AT controls.
Disclaimer
This information is for reference only. For official classifications, consult BIS or a qualified export control professional.