ECCN 3C907
NSRSATEpitaxial materials consisting of a substrate having at least one epitaxially grown layer of any of the following .
What This ECCN Covers
ECCN 3C907 controls epitaxial materials consisting of a substrate with at least one epitaxially grown layer, as specified in the entry. These advanced compound-semiconductor and wide-bandgap materials are controlled for National Security, Regional Stability, and Anti-Terrorism reasons.
Who needs to check this?
Suppliers of epitaxial wafers and substrates (e.g., compound-semiconductor and wide-bandgap materials) for advanced electronics.
Compliance tip
Control turns on the substrate/layer materials and characteristics in the entry — confirm your wafer qualifies. The RS reason can add destination-specific restrictions; verify the Country Chart and apply diligence for advanced-electronics end uses.
Items Covered
- a.Silicon having an isotopic impurity less than 0.08% of silicon isotopes other than silicon-28 or silicon-30; or
- b.Germanium having an isotopic impurity less than 0.08% of germanium isotopes other than germanium-70, germanium-72, germanium-74, or germanium-76.
Control Reasons
Items controlled for national security reasons under multilateral export control regimes.
Items controlled for regional stability reasons.
Items controlled for anti-terrorism reasons. Most items on the CCL have AT controls.
Disclaimer
This information is for reference only. For official classifications, consult BIS or a qualified export control professional.