ECCN 3C005
NSATHigh resistivity materials as follows .
What This ECCN Covers
ECCN 3C005 controls high-resistivity wide-bandgap semiconductor materials — Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), and related compounds — meeting the entry's criteria. These materials enable high-power, high-frequency electronics and are controlled for National Security and Anti-Terrorism reasons.
Who needs to check this?
Suppliers of SiC, GaN, and AlN substrates and boules, and manufacturers of wide-bandgap power and RF device materials.
Compliance tip
Confirm the material and its resistivity/form against the entry — wide-bandgap substrates are a fast-moving controls area. Check the NS and AT columns, and note that epitaxial structures built on these substrates are addressed in 3C006 and related entries.
Items Covered
- a.Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20 °C;
- b.Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10,000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond on the surface of the "substrate".
Control Reasons
Items controlled for national security reasons under multilateral export control regimes.
Items controlled for anti-terrorism reasons. Most items on the CCL have AT controls.
Disclaimer
This information is for reference only. For official classifications, consult BIS or a qualified export control professional.