ECCN 3C002
NSATResist materials as follows and substrates coated with the following resists.
What This ECCN Covers
ECCN 3C002 controls resist materials and substrates coated with them — for example positive photoresists optimized for sub-193 nm wavelengths (including DUV and EUV lithography), and certain other resist chemistries defined in the entry. Advanced resists are essential inputs to leading-edge chip fabrication and are controlled for National Security and Anti-Terrorism reasons.
Who needs to check this?
Photoresist and electronic-materials manufacturers, and semiconductor suppliers exporting advanced lithography resists or coated substrates.
Compliance tip
Classification depends on the optimized exposure wavelength and resist chemistry — confirm against the entry, since resists for older (e.g., 248 nm and above) processes may fall outside. Coordinate with the §744.23 advanced-node end-use controls when the resist supports leading-edge fabrication.
Items Covered
- 1. Positive resists adjusted (optimized) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
- 2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm;
- b.All resists designed for use with electron beams or ion beams, with a sensitivity of 0.01 µcoulomb/mm2 or better;
- d.All resists optimized for surface imaging technologies;
- e.All resists designed or optimized for use with imprint lithography equipment specified by 3B001.f.2 that use either a thermal or photo-curable process.
1 item reserved by BIS (not shown)
Control Reasons
Items controlled for national security reasons under multilateral export control regimes.
Items controlled for anti-terrorism reasons. Most items on the CCL have AT controls.
Disclaimer
This information is for reference only. For official classifications, consult BIS or a qualified export control professional.