ECCN 3B993

• b.Semiconductor wafer fabrication equipment for 300 mm wafers designed for ion implantation and having any of the following:
• 1. Equipment designed for plasma doping, having all of the following:
• 1.a. One or more Radio Frequency (RF) power source(s);
• 1.b. One or more pulsed DC Power Source; and
• 1.c. One or more n-type or p-type dopant implants.
• c.Etch equipment as follows:
• 1. Equipment designed or modified for anisotropic etching of dielectric materials and enabling the fabrication of high aspect ratio features with aspect ratio greater than 30:1 and a lateral dimension on the top surface of less than 100 nm, and having all of the following:
• 1.a. Radio Frequency (RF) power source(s) with at least one pulsed RF output; and
• 1.b. One or more fast gas switching valve(s) with switching time less than 300 milliseconds.
• 2. Equipment, not specified by 3B993.c.1, designed for anisotropic etching of dielectric material and enabling the fabrication of high aspect ratio features having all of the following:
• 2.a. An aspect ratio greater than 30:1; and
• 2.b. A lateral dimension on the top surface of less than 40 nm.
• 3. Equipment, not specified by 3B001.c.1.c, designed or modified for anisotropic dry etching, having all of the following:
• 3.a. Radio Frequency (RF) power source(s) with at least one pulsed RF output;
• 3.b. One or more fast gas switching valve(s) with switching time less than 500 milliseconds; and
• 3.c. Electrostatic chuck with greater than or equal to 10 individually controllable variable temperature elements.
• d.Semiconductor manufacturing deposition equipment as follows:
• 1. Equipment designed, not specified by 3B001.d.14, for deposition assisted by remotely generated 'radicals', enabling the fabrication of a silicon (Si) and carbon (C) containing film, and having all of the following properties of the deposited film:
• 1.a. A dielectric constant (k) of less than 5.3;
• 1.b. In features with an aspect ratio greater than 5:1 with lateral openings of less than 70 nm; and
• 1.c. A feature-to-feature pitch of less than 100 nm.
• 2. Equipment designed for deposition of a film, containing silicon and carbon, and having a dielectric constant (k) of less than 5.3, into lateral openings having widths of less than 70 nm and aspect ratios greater than 5:1 (depth: width) and a feature-to-feature pitch of less than 100 nm, while maintaining the wafer substrate at a temperature greater than 400 °C and less than 650 °C, and having all of the following:
• 2.a. Boat designed to hold multiple vertically stacked wafers;
• 2.b. Two or more vertical injectors; and
• 2.c. A silicon source and propene are introduced to a different injector than a nitrogen source or an oxygen source.
• 3. Equipment designed for chemical vapor deposition of a carbon material layer with a density more than 1.6 g/cm3.
• 4. Deposition equipment, not specified by 3B001.d.19, having direct-liquid injection of more than two metal precursors, designed or modified to deposit a conformal dielectric film with a dielectric constant (K) greater than 35 in features with aspect ratio greater than 50:1 in a single deposition chamber.
• f.Lithography commodities as follows:
• 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) lithography equipment for wafer processing using photo-optical or X-ray methods and having all of the following:
• 1.b. A light source wavelength equal to or longer than 193 nm and having all of the following:
• f.1.b.1 The capability to produce a pattern with a 'Minimum Resolvable Feature size' ('MRF') of 45 nm or less; and
• 1.b.2. A maximum 'dedicated chuck overlay' value greater than 1.50 nm and less than or equal to 2.40 nm.
• 2. Imprint lithography equipment having an overlay accuracy above 1.5 nm and less (better) than or equal to 4.0 nm.
• 3. Commodities designed or modified to increase the number of wafers processed per hour, averaged over any time interval, by greater than 1%, of equipment specified in 3B001.f.1 or 3B993.f.1.
• 4. Commodities not specified by 3B993.f.1 designed or modified to perform all of the following in or with deep-ultraviolet immersion photolithography equipment:
• 4.a. Decrease the minimum resolvable feature specified by 3B993.f.1.b.1; and
• 4.b. Decrease the maximum 'dedicated chuck overlay' of deep-ultraviolet immersion lithography equipment above 1.5 nm and below or equal to 2.4 nm.
• o.Annealing equipment designed for 300 mm wafers as follows:
• o.1 Annealing equipment, operating in a vacuum (equal to or less than 0.01 Pa) environment, performing any of the following:
• o.1.a Reflow of copper (Cu) to minimize or eliminate voids or seams in copper (Cu) metal interconnects; or
• o.1.b Reflow of cobalt (Co) or tungsten (W) fill metal to minimize or eliminate voids or seams;
• 2. Equipment designed to heat a semiconductor wafer to a temperature greater than 1000 °C (1832 °F) for a 'duration' less than 2 ms.
• p.Removal and cleaning equipment as follows:
• 1. Equipment designed for removing polymeric residue and copper oxide (CuO) film and enabling deposition of copper (Cu) metal in a vacuum (equal to or less than 0.01 Pa) environment.
• 3. Equipment designed for dry surface oxide removal preclean or dry surface decontamination.
• q.Inspection and metrology equipment as follows:
• 1. Patterned wafer defect metrology or patterned wafer defect inspection equipment, designed or modified to accept wafers greater than or equal to 300 mm in diameter, and having all of the following:
• 1.a. Designed or modified to detect defects having a size equal to or less than 21 nm; and
• 1.b. Having any of the following:
• 1.b.1. A light source with an optical wavelength less than 400 nm;
• 1.b.2. An electron-beam source with a resolution less (better) than or equal to 1.65 nm;
• 1.b.3. A Cold Field Emission (CFE) electron-beam source; or
• 1.b.4. Two or more electron-beam sources.
• 2. Metrology equipment as follows:
• 2.a. Stand-alone equipment designed to measure wafer shape parameters prior to lithography exposure and utilize measurements to improve overlay or focus of a deep ultraviolet (DUV) lithography system having an immersion lens having a numerical aperture more than 1.3 or an Extreme Ultraviolet lithography (EUV) system; or
• 2.b. Metrology equipment designed to measure focus or overlay after resist development or after etch on product wafers using image-based overlay or diffraction-based measurements techniques, with an overlay measurement accuracy less (better) than or equal to 0.5 nm having any of the following:
• q.2.b.1 designed for integration to a 'track'; or
• q.2.b.2 'fast wavelength switching functionality';

6 items reserved by BIS (not shown)