ECCN 6A002

• a.Optical detectors as follows:
• 1. "Space-qualified" solid-state detectors as follows:
• 1.a. "Space-qualified" solid-state detectors having all of the following:
• 1.a.1. A peak response in the wavelength range exceeding 10 nm but not exceeding 300 nm; and
• 1.a.2. A response of less than 0.1% relative to the peak response at a wavelength exceeding 400 nm;
• 1.b. "Space-qualified" solid-state detectors having all of the following:
• 1.b.1. A peak response in the wavelength range exceeding 900 nm but not exceeding 1,200 nm; and
• 1.b.2. A response "time constant" of 95 ns or less;
• 1.c. "Space-qualified" solid-state detectors having a peak response in the wavelength range exceeding 1,200 nm but not exceeding 30,000 nm;
• 1.d. "Space-qualified" "focal plane arrays" having more than 2,048 elements per array and having a peak response in the wavelength range exceeding 300 nm but not exceeding 900 nm;
• 2. Image intensifier tubes and specially designed "components" therefor, as follows:
• a.A single metal anode; or
• b.Metal anodes with a center to center spacing greater than 500 µm.
• 2.a. Image intensifier tubes having all of the following:
• 2.a.1. A peak response in the wavelength range exceeding 400 nm but not exceeding 1,050 nm;
• 2.a.2. Electron image amplification using any of the following:
• 2.a.2.a. A microchannel plate with a hole pitch (center-to-center spacing) of 12 µm or less; or
• 2.a.2.b. An electron sensing device with a non-binned pixel pitch of 500 µm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate; and
• 2.a.3. Any of the following photocathodes:
• 2.a.3.a. Multialkali photocathodes (e.g., S-20 and S-5) having a luminous sensitivity exceeding 350 µA/lm;
• 2.a.3.b. GaAs or GaInAs photocathodes; or
• 2.a.3.c. Other "III-V compound" semiconductor photocathodes having a maximum "radiant sensitivity" exceeding 10 mA/W;
• 2.b. Image intensifier tubes having all of the following:
• 2.b.1. A peak response in the wavelength range exceeding 1,050 nm but not exceeding 1,800 nm;
• 2.b.2. Electron image amplification using any of the following:
• 2.b.2.a. A microchannel plate with a hole pitch (center-to-center spacing) of 12 µm or less; or
• 2.b.2.b. An electron sensing device with a non-binned pixel pitch of 500 µm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate; and
• 2.b.3. "III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
• 2.c. specially designed "components" as follows:
• 2.c.1. Microchannel plates having a hole pitch (center-to-center spacing) of 12 µm or less;
• 2.c.2. An electron sensing device with a non-binned pixel pitch of 500 µm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate;
• 2.c.3. "III-V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
• a.10 mA/W or less at the peak response in the wavelength range exceeding 400 nm but not exceeding 1,050 nm; or
• b.15 mA/W or less at the peak response in the wavelength range exceeding 1,050 nm but not exceeding 1,800 nm.
• 3. Non-"space-qualified" "focal plane arrays" as follows:
• n.B.:
• 3. Non-"space-qualified" "focal plane arrays" as follows:
• a.Multi-element (not to exceed 16 elements) encapsulated photoconductive cells using either lead sulphide or lead selenide;
• b.Pyroelectric detectors using any of the following:
• 1. Triglycine sulphate and variants;
• 2. Lead-lanthanum-zirconium titanate and variants;
• 3. Lithium tantalate;
• 4. Polyvinylidene fluoride and variants; or
• 5. Strontium barium niobate and variants.
• c."Focal plane arrays" specially designed or modified to achieve 'charge multiplication' and limited by design to have a maximum "radiant sensitivity" of 10 mA/W or less for wavelengths exceeding 760 nm, having all of the following:
• 1. Incorporating a response limiting mechanism designed not to be removed or modified; and
• 2. Any of the following:
• 2.a. The response limiting mechanism is integral to or combined with the detector element; or
• 2.b. The "focal plane array" is only operable with the response limiting mechanism in place.
• d.Thermopile arrays having less than 5,130 elements;
• 3.a. Non-"space-qualified" "focal plane arrays" having all of the following:
• 3.a.1. Individual elements with a peak response within the wavelength range exceeding 900 nm but not exceeding 1,050 nm; and
• 3.a.2. Any of the following:
• 3.a.2.a. A response "time constant" of less than 0.5 ns; or
• 3.a.2.b. specially designed or modified to achieve 'charge multiplication' and having a maximum "radiant sensitivity" exceeding 10 mA/W;
• 3.b. Non-"space-qualified" "focal plane arrays" having all of the following:
• 3.b.1. Individual elements with a peak response in the wavelength range exceeding 1,050 nm but not exceeding 1,200 nm; and
• 3.b.2. Any of the following:
• 3.b.2.a. A response "time constant" of 95 ns or less; or
• 3.b.2.b. specially designed or modified to achieve 'charge multiplication' and having a maximum "radiant sensitivity" exceeding 10 mA/W;
• 3.c. Non-"space-qualified" non-linear (2-dimensional) "focal plane arrays" having individual elements with a peak response in the wavelength range exceeding 1,200 nm but not exceeding 30,000 nm;
• 3.d. Non-"space-qualified" linear (1-dimensional) "focal plane arrays" having all of the following:
• 3.d.1. Individual elements with a peak response in the wavelength range exceeding 1,200 nm but not exceeding 3,000 nm; and
• 3.d.2. Any of the following:
• 3.d.2.a. A ratio of 'scan direction' dimension of the detector element to the 'cross-scan direction' dimension of the detector element of less than 3.8; or
• 3.d.2.b. Signal processing in the detector elements;
• 3.e. Non-"space-qualified" linear (1-dimensional) "focal plane arrays" having individual elements with a peak response in the wavelength range exceeding 3,000 nm but not exceeding 30,000 nm;
• 3.f. Non-"space-qualified" non-linear (2-dimensional) infrared "focal plane arrays" based on 'microbolometer' material having individual elements with an unfiltered response in the wavelength range equal to or exceeding 8,000 nm but not exceeding 14,000 nm;
• 3.g. Non-"space-qualified" "focal plane arrays" having all of the following:
• 3.g.1. Individual detector elements with a peak response in the wavelength range exceeding 400 nm but not exceeding 900 nm;
• 3.g.2. specially designed or modified to achieve 'charge multiplication' and having a maximum "radiant sensitivity" exceeding 10 mA/W for wavelengths exceeding 760 nm; and
• 3.g.3. Greater than 32 elements;
• b."Monospectral imaging sensors" and "multispectral imaging sensors", designed for remote sensing applications and having any of the following:
• 1. An Instantaneous-Field-Of-View (IFOV) of less than 200 µrad (microradians); or
• 2. Specified for operation in the wavelength range exceeding 400 nm but not exceeding 30,000 nm and having all the following:
• 2.a. Providing output imaging data in digital format; and
• 2.b. Having any of the following characteristics:
• 2.b.1. "Space-qualified"; or
• 2.b.2. Designed for airborne operation, using other than silicon detectors, and having an IFOV of less than 2.5 mrad (milliradians);
• a.Charge Coupled Devices (CCD) not designed or modified to achieve 'charge multiplication'; or
• b.Complementary Metal Oxide Semiconductor (CMOS) devices not designed or modified to achieve 'charge multiplication'.
• c.'Direct view' imaging equipment incorporating any of the following:
• 1. Image intensifier tubes having the characteristics listed in 6A002.a.2.a or 6A002.a.2.b;
• 2. "Focal plane arrays" having the characteristics listed in 6A002.a.3; or
• 3. Solid state detectors specified by 6A002.a.1;
• a.Industrial or civilian intrusion alarm, traffic or industrial movement control or counting systems;
• b.Medical equipment;
• c.Industrial equipment used for inspection, sorting or analysis of the properties of materials;
• d.Flame detectors for industrial furnaces;
• e.Equipment specially designed for laboratory use.
• d.Special support "components" for optical sensors, as follows:
• 1. "Space-qualified" cryocoolers;
• 2. Non-"space-qualified" cryocoolers having a cooling source temperature below 218 K (−55 °C), as follows:
• 2.a. Closed cycle type with a specified Mean-Time-To-Failure (MTTF) or Mean-Time-Between-Failures (MTBF), exceeding 2,500 hours;
• 2.b. Joule-Thomson (JT) self-regulating minicoolers having bore (outside) diameters of less than 8 mm;
• 3. Optical sensing fibers specially fabricated either compositionally or structurally, or modified by coating, to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive.
• f.'Read-Out Integrated Circuits' ('ROIC') specially designed for "focal plane arrays" specified by 6A002.a.3.

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